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inchange semiconductor product specification silicon pnp power transistors 2sA1658 description with to-220f package fig.1 simplified outline (to-220f) and symbol complement to type 2sc4369 good linearity of h fe applications for general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -30 v v ceo collector-emitter voltage open base -30 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i b b base current -0.3 a p c collector dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification silicon pnp power transistors 2sA1658 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ; i b =0 b -30 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a b -0.3 -0.8 v v be base-emitter on voltage i c =-0.5a ; v ce =-2v -0.75 -1.0 v i cbo collector cut-off current v cb =-20v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe-1 dc current gain i c =-0.5a ; v ce =-2v 70 240 h fe-2 dc current gain i c =-2.5a ; v ce =-2v 25 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 40 pf f t transition frequency i c =-0.5a ; v ce =-2v 100 mhz ? h fe- 1 classifications o y 70-140 120-240 2
inchange semiconductor product specification silicon pnp power transistors 2sA1658 package outline 3 fig.2 outline dimensions

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